6N60-C mosfet equivalent, n-channel power mosfet.
* RDS(ON) < 1.5Ω @ VGS=10V, ID=3.1A * Fast switching capability * Avalanche energy tested * Improved dv/dt capability, high ruggedness
* SYMBOL
Power MOSFET
* O.
in switching power supplies and adaptors.
* FEATURES
* RDS(ON) < 1.5Ω @ VGS=10V, ID=3.1A * Fast switching capability.
The UTC 6N60-C is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at.
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